super fast recovery diode modules 280 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 qr_1240r30 preliminary 9/12 rev. 2 outline drawing and circuit diagram qrd qrj qrc 2 3 1 2 3 1 2 3 1 2 3 1 qrf d a g h f f l j (3 typ.) e b p (3 typ.) n (2 typ.) c m q (2 typ.) 1 3 2 k (3 typ.) dimensions millimeters a 94 b 80 c 30 d 34 e 40 f 23 g 17 h 13 dimensions millimeters j 12 k m6 l 7.5 m 25.4 n 4 p 19 q 6.5 dia. description: powerex super fast recovery dual diode modules are designed for use in applications requiring fast switching. the modules are isolated for easy mounting with other components on common heatsinks. features: ? super fast recovery time ? rohs compliant ? isolated mounting ? metal baseplate ? low thermal impedance ? 2500v isolating voltage applications: ? free wheeling ? welding and plasma cutting machine
qr_1240r30 super fast recovery dual diode modules 280 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 preliminary 9/12 rev. 2 absolute maximum ratings, t j = 25 c unless otherwise specifed qrd1240r30 qrc1240r30 qrf1240r30 ratings symbol qrj1240r30 units repetitive peak reverse blocking voltage v rrm 1200 volts non-repetitive peak reverse blocking voltage v rsm v rrm + 100 volts dc current, t c = 80c (resistive load) i f(dc) 280 amperes peak half cycle non-repetitive surge current (t = 8.3ms, 100% v rrm reapplied) i fsm tbd amperes i 2 t for fusing for one cycle (t = 8.3ms, 100% v rrm reapplied) i 2 t tbd a 2 sec operating junction temperature t j -40 to 150 c storage temperature t stg -40 to 150 c maximum mounting torque, m6 mounting screw 26 in-lb maximum mounting torque, m6 terminal screw 26 in-lb module weight (typical) 180 grams v isolation (60 hz, circuit to base, all terminals shorted, t = 60 sec) v rms 2500 volts electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units reverse leakage current i rrm rated v rrm 1.0 ma on-state voltage v fm i f = 200a 2.4 3.2 volts i f = 280a 2.7 3.5 volts reverse recovery time t rr i f = 200a, di/dt = tbd 150 ns reverse recovery charge q rr i f = 200a, di/dt = tbd 19.2 c thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case* r th(j-c) q per diode 0.075 c/w contact thermal resistance, case to sink r th(c-s) per module 0.05 c/w (lubricated)* *t c , t f measured point is just under the chip.
qr_1240r30 super fast recovery dual diode modules 280 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 preliminary 9/12 rev. 2 on-state current, i fm , (amperes) reverse recovery time, t rr , (ns) reverse recovery current, i rr , (amperes) reverse recovery characteristics (typical) tbd on-state current, i fm , (amperes) reverse recovery switching loss, e rr , (mj/pulse) reverse recovery switching loss (typical) tbd 180 120 90 60 30 15 maximum on-state power dissipation (sinusoidal waveform) 1200 800 1000 600 400 200 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 250 300 conduction angle 0 360 180 180 120 90 60 30 15 maximum allowable case temperature (sinusoidal waveform) 150 140 120 130 110 70 60 90 100 80 50 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 250 300 conduction angle 0 360 180 360 180 270 120 90 60 30 15 maximum on-state power dissipation (rectangular waveform) 1600 1400 1000 1200 800 200 600 400 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 100 300 200 400 0 100 300 200 400 270 360 (dc) 180 120 90 60 30 15 maximum allowable case temperature (rectangular waveform) 150 130 110 90 70 50 30 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) conduction angle 0 360 180 conduction angle 0 360 180 0 1 3 4 2 5 40 on-state voltage, v fm , (volts) on-state characteristics (typical) 400 4000 on-state current, i fm , (amperes) transient thermal impedance characteristics 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') t j = 25c t j = 125c single pulse t c = 25c per unit base = r th(j-c) = 0.075c/w
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